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Transistor
2SD2413
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
s Features
q q q q q
4.50.1 1.60.2
1.50.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.60.1
0.4max.
45
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15 3 2 1
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 400 400 5 200 100 1 150 -55 ~ +150 1cm2 Unit V V V mA mA W C C
1:Base 2:Collector 3:Emitter
marking
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
EIAJ:SC-62 Mini Power Type Package
Marking symbol : 1S
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = 100A, IE = 0 IC = 500A, IB = 0 IE = 100A, IC = 0 VCE = 5V, IC = 30mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA VCB = 30V, IE = -20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 40 7 min 400 400 5 30 1.5 1.5 V V MHz pF typ max Unit V V V
2.50.1
+0.25
1
Transistor
PC -- Ta
1.4
2SD2413
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
120 Ta=25C 100 100 30 10 3 1 25C 0.3 -25C 0.1 0.03 0.01 0.1 Ta=75C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (W)
1.2
1.0
Collector current IC (mA)
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
80 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 20 0.1mA 0
0.8
60
0.6
40
0.4
0.2
0 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 180 VCE=5V 60
fT -- I E
VCB=30V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
150
Transition frequency fT (MHz)
30 100
30 10 3 25C 1 0.3 0.1 0.03 0.01 0.1 Ta=-25C 75C
Forward current transfer ratio hFE
50
120
40
90 25C 60 Ta=75C
30
20
30
-25C
10
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 -1
-3
-10
-30
-100 -300 -1000
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
12
Collector output capacitance Cob (pF)
10
IE=0 f=1MHz Ta=25C
8
6
4
2
0 10
30
100
300
1000
Collector to base voltage VCB (V)
2

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